Title：UnderstandingDefect and Doping Physics in Semiconductors: from Equilibrium toExtreme-nonequilibrium

Speaker：黄兵，北京计算科学研究中心

Time：April 16,20219:00

Venue: Central Campus, Tang Aoqing Building B Area 521 Lecture Hall

Abstract：Itis known that defects or dopants can fundamentally determine the overallelectronic structures of semiconductors. In this talk, I will give anintroduction on our recent works in this field: under equilibrium conditions,we have developed a unified theory to understand the strain-dependent defectsolution, defect levels, and Fermi energy pinning effects, and we also showthat new spin-orbital coupling effects may be hidden in the harmful deep-leveldefects; under nonequilibrium conditions, we have developed theories tounderstand the formation of complex defects in the surface or interface ofsemiconductors, and we have developed a unified formula to understand theplasmonic excitation and proposed a new transport model to realize ideal chargetransport in ferroelectric superlattices; under extreme-nonequilibriumconditions, we are developing methods to calculate the time-dependent defectformation and evolution in semiconductors and their effects on the fundamentalelectronic structures of semiconductors.

Brief Bio：BingHuang obtained his B.S. in Physics College, Jilin Univ. in 2005 (supervisor:Weitao Zheng) and Ph.D. in Physics Depart. Tsinghua Univ. in 2010 (supervisor:Wenhui Duan), respectively. During 2010-2015, he worked at National RenewableEnergy Lab. (supervisor: Su-Huai Wei), Oak Ridge National Lab. and Univ. Utahas Postdoc or Research Assistant. He joined Beijing Computational ResearchCenter in Sept. 2015 as an assistant professor and promoted to (tenured)associate professor in 2020. He holds a joint faculty position in Depart. OfPhysics, Beijing Normal University. His research focuses on computationalsemiconductor physics and defect physics in semiconductors, and he haspublished ~90 papers (with 16 in PRL/PRX) with a total citation around 5000times.